Comparing Surface Analysis Techniques

 

TECHNIQUE

Plus feature

Minus features
LEED/RHEED
Simple crystal order
Inexpensive
only crystals
difficult to get lattice spacing
may damage sample
no elemental or chemical info
XPS
Chemical information
low damage
small charging problems 10% accuracy with standards
poor spatial resolution
slow
does not detect H
AES
High spatial resolution
Fast
10% accuracy with standards
may damage
charging problems
ISS
See only surface
Low damage with He
surface structure
some isotopic information
no mapping available
medium to poor elemental ID
 
RBS
Depth profile non destructive
Absolute quantification (< 5%)
Structure using channeling
low damage
Requires expensive accelerator
Poor depth resolution
SIMS
Extremely sensitive
Detects H
Isotope information
Very fast
Quantification very hard
 
ESD
Detects H
structural information
mapping
Only detects some elements
Destructive
 
AES = Auger Electron Spectroscopy
ESD = Electron Stimulated Desorption (secondary ions)
ISS = Ion Scattering Spectroscopy (low energy)
LEED/RHEED = Low Energy Electron Diffraction/Reflection High Energy Electron Diffraction
RBS = Rutherford Backscattering Spectrometry
SIMS = Secondary Ion Mass Spectroscopy
XPS = X-Ray Photoelectron Spectroscopy

Techniques arranged in order of usefulness for different analytical applications

Composition (Quantitative)
RBS
XPS
AES
ISS
 
Low level impurity and trace analysis
SIMS
 
Imaging
AES
SIMS
ESD
 
Structure
STM
LEED & REED
ISS
RBS - channeling
ESDIAD
 
Electronic structure
(Chemical state)
 
XPS
UPS
AES
(SIMS, ESD)
 
Hydrogen detection
SIMS
ESD
Rcoil Sectroscopy
 
Surface sensitivity
STM - AFM
ISS
SIMS
 
Sensitive samples (e. g., biological, polymers)
UPS
XPS
SIMS (Static)
 
Isotopic information
SIMS
ESD
(RBS, ISS)
 

Copyright 2002, by Raśl Baragiola, University of Virginia. All rights reserved.