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Petra Reinke


Associate Professor

M.S./B.S. Vordiplom (BS) 1984Diplom (MS) 1988 Universität Konstanz, Konstanz (Germany) Chemistry
Ph.D. Dr. rer. nat (PhD) 1992, Max-Planck Institut für Plasmaphysik, Technische Universität München, Garching (Germany) Physics
Postdoctoral 1992-1994, École Polytechnique , Montréal (Canada)
Habilitation 1995-2000, Universität Basel (Switzerland)

Engineering Physics
Department of Materials Science & Engineering
University of Virginia
PO Box 400745
395 McCormick Road
Charlottesville, VA 22904-4745
Office: Wilsdorf Hall Room 126
p: 434-924 7203
f: 434-982-5660

website: Reinke Research Group

Research Interests

The research interests are in the area of carbon, semiconductor and metal nanostructures which are investigated using surface science methods, such as scanning probe microscopy (STM and AFM) and photoelectron spectroscopy. Nanostructures of interest are clusters, wires or even more complicated networks, and to study their formation, and the relation between geometric and electronic structure and properties is our main focus. Nanostructure which are limited in their extension in one (surface), two (wire) or three (cluster) dimensions occupy the transition regime between bulk material and isolated atom and the electrical, optical, and magnetic properties change rapidly with size. Despite the considerable volume of work done in this area numerous challenges remain and many questions are still unresolved.

In the last few years nanotechnology has garnered considerable attention, a development which is in part driven by the continuous demand for performance enhancement of electronic devices requiring a size reduction in integrated circuits and increasing data storage capacity. In addition the changes in material properties when entering the nanoscale regime has intrigued researchers for some time and is a very fascinating subject to study.

A possible path to the development of nanoelectronics is the production of simple, nanometer sized functional subunits which can be assembled in numerous different ways much like children’s lego blocks. Molecular electronics, which employs organic macromolecules to perform the individual tasks in an electronic circuit, has already illustrated the feasibility of this concept in some ways. In order to achieve and control the desired functionality of nanoscale units a thorough understanding and control of the material performance on this length scale has to be gained. The functionality will ultimately rely on the control of properties on a molecular level, entering the domain where quantum mechanical effects govern their behavior.

The methods which are employed in our studies are particularly sensitive to the electronic structure which is decisive for many applications but also an expression of the interaction within the system and as such its measurement is an important tool in the understanding of the relation between structure and properties.

Selected Publications



J. Knutsson, S. Lehmann, M. Hjort, P. Reinke, E. Lundgren, K. Dick, R. Timm, A.  Mikkelsen. Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: The effect of epitaxial overgrowth. submitted - ACS Applied Materials and Interfaces. (2014)

C.A. Nolph, K.R. Simov, G. Ramalingam, P. Reinke. Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties. SPIE-NanoScience+Engineering 91740O (2014).


J.B. McClimon, P. Reinke. Interaction of C60 with Tungsten: Modulation of Morphology and Electronic Structure on the Molecular Length Scale. J. Phys. Chem. C 118, 24479 (2014).


G. Ramalingan, P. Reinke. Towards a Mn-Co surface alloy: study of Co adsorption on Si(100) and its interaction with Mn wires. Surf. Sci. 620, 1 (2014)


J. Kassim, C.A. Nolph, M. Jamet, P. Reinke, J.A. Floro. "Silicide formation during Mn-doping of Ge/Si(001) self-assembled quantum dots". J. Mat. Res. 28, 3210 (2013).


C.A. Nolph, J. Kassim, J.A. Floro, P. Reinke. Surface driven Mn-doping of Ge quantum dots: Mn interaction with the {105} facet and the wetting layer. J. Phys. Cond. Matter. 25, 315801 (2013)


J. Kassim, C. Nolph, M. Jamet, P. Reinke, J.A. Floro. Solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures. Appl. Phys. Lett. 101, 242407 (2012).


J. Kassim, C. Nolph, M. Jamet, P. Reinke, J.A. Floro. Ge1-xMnx heteroepitaxial quantum dots: growth, morphology and magnetism. J. Appl. Phys. 113, 073910 (2012).


K.R. Simov, C.A. Nolph, P. Reinke. Guided Self-Assembly of Mn Wires on the Si(100)(2x1) Surface. J. Phys. Chem. C116, 1670 (2012).


C.A. Nolph, H. Liu, P. Reinke. Bonding Geometry of Mn-Wires to the Si(100)(2x1) Surface. Surface Science 605, L29 (2011).


W. Yin, S. Wolf , C. Ko, S. Ramanathan, and P. Reinke. Nanoscale probing of electronic bandgap and topography of VO2 thin film surfaces by scanning tunneling microscopy. J. App. Phys. 109, 024311 (2011)

C.A. Nolph, K.R. Simov, H. Liu, P. Reinke. Manganese Nanostructures on Si(100)(2x1) Surfaces: Temperature-Driven Transition from Wires to Silicides. J. of Phys. Chem. C. 114, 19727 (2010)

H. Shin, S. E. O’Donnell, P. Reinke, N. Ferralis, A. K Schmid, H. I. Li,  A. D. Novaco, L. W. Bruch, and R. D. Diehl. The “2D floating solid” monolayer of C60 on graphite. Phys. Rev. B 82, 235427 (2010)