FLORO RESEARCH GROUP
  1. NANO-SCALE CHEMISTRY OF SELF-ASSEMBLED NANOSTRUCTURES IN EPITAXIAL SiGe GROWTH, Prabhu Balasubramanian, Jerrold A. Floro, Jennifer L. Gray and Robert Hull, J. Cryst. Growth 400, 15-20 (2014).
  2. EPITAXIAL Si ENCAPSULATION OF HIGHLY MISFITTING SiC QUANTUM DOT ARRAYS FORMED ON Si (001), C.W. Petz, D. Yang, A. F. Myers, J. Levy, and J.A. Floro, Appl. Phys. Lett. 104, 013108 (2014).
  3. SILICIDE FORMATION DURING Mn DOPING OF Ge/Si (001) SELF-ASSEMBLED QUANTUM DOTS, J. Kassim, C. Nolph, M. Jamet, P. Reinke, J. A. Floro, J. Mater. Res. 28, 3210-3217 (2013).
  4. ADDITION OF Mn TO Ge QUANTUM DOT SURFACES – INTERACTION WITH THE Ge QUANTUM DOT {105}FACET AND THE Ge (001) WETTING LAYER, C. A. Nolph, J. K. Kassim, J. A. Floro and P. Reinke, J. Phys.: Condens. Matter 25, 315801:1-12 (2013).
  5. STRAIN-INDUCED MICROSTRUCTURAL AND ORDERING BEHAVIORS OF EPITAXIAL Fe38.5Pd61.5 FILMS GROWN BY PULSED LASER DEPOSITION, M. A. Steiner, R. B. Comes, J. A. Floro, W. A. Soffa, J. M. Fitz-Gerald, and V. S. Smentowski, J. Vac. Sci. Tech. A31, 050824:1-13 (2013).
  6. Ge1-xMnx HETEROEPITAXIAL QUANTUM DOTS: GROWTH, MORPHOLOGY AND MAGNETISM, J. Kassim, C. Nolph, M. Jamet, P. Reinke and J. A. Floro, 113, J. Appl. Phys. 073910 (2013).
  7. ONE DIMENSIONAL LATERAL GROWTH OF EPITAXIAL ISLANDS ON FOCUSED ION BEAM PATTERNED SUBSTRATES, J. L. Gray, P. L . Nichols, R. Hull and J. A. Floro, J. Appl. Phys. 113, 044308-1-7 (2013).
  8. FORMATION AND STABILITY OF 2D ORDERED SIC/SI(001) NANODOTS, C. W. Petz, D. Yang, J. Levy, and J. A. Floro, J. Mater. Res. 28, 261-267 (2013).
  9. STRUCTURE OF Si-CAPPED Ge/SiC/Si (001) EPITAXIAL NANODOTS: IMPLICATIONS FOR QUANTUM DOT PATTERNING, C. W. Petz, D. Yang, J. Levy, and J. A. Floro, Appl. Phys. Lett. 100, 141603 (2012).
  10. ENHANCED MAGNETIC AND ALECTIRCAL PROPERTIES IN AMORPHOUS Ge:Mn THIN FILMS BY NON-MAGNETIC CO-DOPING, W. Yin, C. D. Kell, L. He, M. C. Dolph, C. Duska, J. Lu, R. Hull, J. A. Floro, and S. A. Wolf, J. Appl. Phys. 111, 033916 (2012).
  11. INHOMOGENEOUS LOW TEMPERATURE EPITAXIAL BREAKDOWN DURING Si OVERGROWTH OF GeSi QUANTUM DOTS, C. W. Petz and J. A. Floro, J. Appl. Phys. 110, 023508:1-6 (2011).
  12. CONTROLLING THERMAL CONDUCTANCE THROUGH QUANTUM DOT ROUGHENING AT INTERFACES, P. E. Hopkins, J. C. Duda, C. W. Petz and J. A. Floro, Phys. Rev. B. 84, 035438:1-7 (2011). Also published in the Virtual Journal of Nanoscale Science and Technology, Volume 24, Issue 6: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000024000006000005000001&idtype=cvips&gifs=yes&ref=no
  13. CONTROL OF SEMICONDUCTOR QUANTUM DOT NANOSTRUCTURES: VARIANTS OF SIxGe1-x QUANTUM DOT MOLECULES, J. K. Murphy, R. Hull, D. Pyle, H. Wang, J. Gray, and J. Floro; J. Vac. Sci. Tech. B 29, 011209-1-5 (2011).
  14. COUPLED EFFECTS OF ION BEAM CHEMISTRY AND MORPHOLOGY ON DIRECTED SELF-ASSEMBLY OF EPITAXIAL SEMICONDUCTOR NANOSTRUCTURES, J. F. Graham, C. D. Kell, J. A. Floro and R. Hull, Nanotechnology 22, 075301 (2011).
  15. IN SITU STRESS MEASUREMENTS DURING ELECTRODEPOSITION OF Au-Ni ALLOYS, E. Rouya, G. R. Stafford, C. Beauchamp, J. A. Floro, R. G. Kelly, M. L. Reed, and G. Zangari, Electrochem. and Sol. St. Letters 13, D87 (2010).
  16. PREFERRED HETEROEPITAXIAL ORIENTATIONS OF ZnO NANORODS ON Ag, J. A. Floro, J. R. Michael, L. N. Brewer, and J. W. P. Hsu, J. Mater. Res. 25, 1352-61 (2010).
  17. STRAIN RELAXATION IN AlGaN MULTILAYER STRUCTURES BY INCLINED DISLOCATIONS, D. M Follstaedt, S. R. Lee, A. A. Allerman, and J. A. Floro, J. Appl. Phys. 105, 083507:1-13 (2009).
  18. ATOMISTIC SIMULATIONS OF STRESS AND MICROSTRUCTURE EVOLUTION DURING POLYCRYSTALLINE Ni FILM GROWTH, C. W. Pao, S. M. Foiles, E. B. Webb III, D. J. Srolovitz, and J. A. Floro, Phys. Rev. B 79, 224113:1-9 (2009).
  19. THIN FILM COMPRESSIVE STRESSES DUE TO ADATOM INSERTION INTO GRAIN BOUNDARIES, Chun-Wei Pao, Stephen M. Foiles, Edmund B. Webb III, David J. Srolovitz, and Jerrold A. Floro, Phys. Rev. Lett. 99, 036102 (2007).
  20. PERIODIC ARRAYS OF EPITAXIAL SELF-ASSEMBLED SiGe QUANTUM DOT MOLECULES GROWN ON PATTERNED Si SUBSTRATES, J. L. Gray, R. Hull, and J. A. Floro, J. Appl. Phys., 100, 084312 (2006).
  21. X-RAY DIFFRACTION MAPPING OF STRAIN FIELDS AND CHEMCIAL COMPOSITION OF SiGe:Si(001) QUANTUM DOT MOLECULES, M. S. Leite, J. L. Gray, R. Hull, J. A. Floro, R. Magalhaes-Paniago, and G. Medieros-Ribeiro, Phys. Rev. B 73, 121308 (2006).
  22. BEYOND THE HETEROEPITAXIAL QUANTUM DOT: SELF-ASSEMBLING COMPLEX NANOSTRUCTURES CONTROLLED BY STRAIN AND GROWTH KINETICS, J. L. Gray, R. Hull, Chi-Hang Lam, P. Sutter, J. Means, and J. A. Floro, Phys. Rev. B 72, 155323 (2005).
  23. ANION ADSORPTION INDUCED REVERSAL OF COHERENCY STRAIN, T. Trimble, L. Tang, N. Vasiljevic, N. Dimitrov, M. van Schilfgaarde, C. Friesen, C. V. Thompson, S. C. Seel, J. A. Floro, and K. Sieradzki, Phys. Rev. Lett. 95, 166106 (2005).
  24. RELAXATION OF COMPRESSIVELY-STRAINED AlGaN BY INCLINED THREADING DISLOCATIONS, D. M. Follstaedt, S. R. Lee, A. A. Allerman, J. A. Floro, and M. H. Crawford, Appl. Phys. Lett. 87, 121112 (2005).
  25. HETEROEPITAXIAL SELF-ASSEMBLY OF HIGHER-COMPLEXITY STRUCTURES BY COMBINING GROWTH CONTROL WITH NANOPATTERNING, J. A. Floro, J. L. Gray, S. Atha, N. Singh, D. Elzey, and R. Hull, MRS Proc. Vol. (2005).
  26. QUANTITATIVE DETERMINATION OF TENSILE STRESS CREATION DURING ISLAND COALESCENCE USING SELECTIVE-AREA GROWTH, S. J. Hearne, S. C. Seel, J. A. Floro, C. W. Dyck, W. Fan, and S. R. J Brueck, J. Appl. Phys. 97, 083530 (2005).
  27. SHORT-RANGE LATERAL ORDERING OF GeSi QUANTUM DOTS DUE TO ELASTIC INTERACTIONS, Jerrold A. Floro, Robert Hull, and Jennifer L. Gray, in Lateral Alignment of Epitaxial Quantum Dots, Oliver Schmidt, ed. (Springer-Verlag, Berlin), 2007.
  28. MECHANISMS INDUCING COMPRESSIVE STRESS DURING ELECTRODEPOSITION OF Ni, Sean J. Hearne and Jerry A. Floro, J. Appl. Phys. 97, 014901 (2005).
  29. IN SITU MEASUREMENTS OF THE CRITICAL THICKNESS FOR STRAIN RELAXATION IN AlGaN/GaN HETEROSTRUCTURES, S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, and S. Mahajan, Appl. Phys. Lett. 85, 6164 (2004).
  30. HIERARCHICAL SELF-ASSEMBLY OF EPITAXIAL SEMICONDUCTOR NANOSTRUCTURES, Jennifer L. Gray, Surajit Atha, Robert Hull, and Jerrold A. Floro, Nanoletters 4, 2447 (2004).
  31. MISFIT DISLOCATION FORMATION IN THE AlGaN/GaN HETEROINTERFACE, J.A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004).
  32. FORMATION OF ONE-DIMENSIONAL SURFACE GROOVES FROM PIT INSTABILITIES IN ANNEALED SiGe/Si (100) EPITAXIAL FILMS, J. L. Gray, R. Hull, and J. A. Floro, Appl. Phys. Lett. 85,3253 (2004).
  33. KINETIC SIZE SELECTION MECHANISMS IN HETEROEPITAXIAL QUANTUM DOT MOLECULES, J. L. Gray, N. Singh, D. M. Elzey, R. Hull, and J. A. Floro, Phys. Rev. Lett. 92, 135504 (2004).
  34. GROWTH OF QUANTUM FORTRESS STRUCTURES IN Si1-xGex/Si VIA COMBINATORIAL DEPOSITION, Thomas E. Vandervelde, Piysuh Kumar, Takeshi Kobayashi, Jennifer L. Gray, Tim Pernell, Jerrold A. Floro, Robert Hull, and John C. Bean, Appl. Phys. Lett. 83, 5205 (2003).
  35. THE ORIGINS OF GROWTH STRESSES IN AMORPHOUS SEMICONDUCTOR THIN FILMS, J. A. Floro, P. G. Kotula, S. C. Seel, and D. J. Srolovitz, Phys. Rev. Lett. 91, 096101 (2003).
  36. PRECISION PLACMENT OF HETEROEPITAXIAL SEMICONDUCTOR QUANTUM DOTS, R. Hull, J. L. Gray, M. Kammler, T. Vandervelde, T. Kobayashi, P. Kumar, T. Pernell, J. C. Bean, J. A. Floro, and F. M. Ross, Mat. Sci. Eng. B 101, 1 (2003).
  37. INTERACTION BETWEEN SURFACE MORPHOLOGY AND MISFIT DISLOCATIONS AS STRAIN RELAXATION MODES IN LATTICE HETEROEPITAXY, R. Hull, J. Gray, C. C. Wu, S. Atha, and J. A. Floro, J. Phys. Condens. Matter 14, 12829 (2002).
  38. CONTROL OF SURFACE MORPHOLOGY THROUGH VARIATION OF GROWTH RATE IN SiGe/Si (001) EPITAXIAL FILMS: NUCLEATION OF “QUANTUM FORTRESSES”, Jennifer L. Gray, Robert Hull, and Jerrold A. Floro, Appl. Phys. Lett. 81, 2445 (2002).
  39. EXTENDED SPECTRAL RANGE SURFACE-MODIFIED SOL-GEL COATED INFRARED WAVEGUIDE SENSORS, Frederick G. Haiback, Arturo Sanchez, Jerrold A. Floro, and Thomas M. Niemczyk, Appl. Spectroscopy 56, 398 (2002).
  40. SiGe EPILAYER STRESS RELAXATION: QUANTITATIVE RELATIONSHIPS BETWEEN EVOLUTION OF SURFACE MORPHOLOGY AND MISFIT DISLOCATION ARRAYS, Jennifer L. Gray, Robert Hull, and Jerrold A. Floro, Mat. Res. Soc. Proc. Vol. 636, 235 (2002).
  41. ORIGIN OF COMPRESSIVE RESIDUAL STRESS IN POLYCRYSTALLINE THIN FILMS, E. Chason, B. W. Sheldon, L. B. Freund, J. A. Floro, and S. J. Hearne, Phys. Rev. Lett. 88, 156103 (2002).
  42. PHYSICAL ORIGINS OF INTRINSIC STRESS IN VOLMER-WEBER THIN FILMS, Jerrold A. Floro, Eric Chason, Robert C. Cammarata, and David J. Srolovitz, MRS Bulletin, January, 2002.
  43. THE DYNAMIC COMPETITION BETWEEN STRESS GENERATION AND RELAXATION MECHANISMS DURING VOLMER-WBER THIN FILM GROWTH, J. A. Floro, S. J. Hearne, J. A. Hunter, P. Kotula, E. Chason, S. C. Seel, and C. V. Thompson, J. Appl. Phys. 89, 4886 (2001).
  44. IN SITU STRESS MEASUREMENT OF THIN FILMS, S. J. Hearne and J. A. Floro, in The Encyclopedia of Materials: Science and Technology (Elsevier, Oxford, UK 2001), pp. 9251-9257.
  45. CURVATURE-BASED TECHNIQUES FOR REAL-TIME STRESS MEASUREMENT DURING THIN FILM GROWTH, Jerrold A. Floro and Eric Chason, in In Situ and Real Time Characterization of Thin Films, Orlando Auciello and Alan R. Krauss, eds. (John Wiley and Sons, NY 2001), pp. 191-216.
  46. COMPOSITION AND STRUCTURE OF SPUTTER DEPOSITED ERBIUM HYDRIDE THIN FILMS, D. P. Adams, J. A. Romero, M. A. Rodriguez, J. A. Floro, and J. A. Banks, MRS Proceedings Vol. 616, 87 (2000).
  47. TENSILE STRESS EVOLUTION DURING DEPOSITION OF VOLMER-WEBER THIN FILMS, Steven C. Seel, Carl V. Thompson, Sean J. Hearne, and Jerrold A. Floro, J. Appl. Phys. 88, 7079 (2000).
  48. NON-CLASSICAL SMOOTHING OF NANOSCALE SURFACE CORRUGATIONS, Jonah Erlebacher, Michael J. Aziz, Eric Chason, Michael B. Sinclair, and Jerrold A. Floro, Phys. Rev. Lett. 84, 5800 (2000).
  49. BRITTLE-DUCTILE RELAXATION KINETICS OF STRAINED ALGAN/GAN HETEROSTRUCTURES, S. J. Hearne, J. Han, S. R. Lee, J. A. Floro, and D. M. Follstaedt, Appl. Phys. Lett. 76, 1534 (2000).
  50. NOVEL SIGE ISLAND COARSENING KINETICS: OSTWALD RIPENING AND ELASTIC INTERACTIONS, J. A. Floro, M. B. Sinclair, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, and G. A. Lucadamo, Phys. Rev. Lett. 84, 701 (2000).
  51. NONINEAR AMPLITUDE EVOLUTION DURING SPONTANEOUS PATTERNING OF ION-BOMBARDED SI (001), Jonah Erlebacher, Michael J. Aziz, Eric Chason, Michael B. Sinclair, and Jerrold A. Floro, J. Vac. Sci. Tech. A18, 115 (2000).
  52. IN SITU MEASUREMENTS OF STRESS RELAXATION DURING STRAINED LAYER HETEROEPITAXY, E. Chason, J. Yin, K. Tetz, R. Beresford, L.B. Freund, M. Ujue Gonzalez, J.A. Floro, Materials Research Society Symp. Proc., Vol 583, 167 (2000).
  53. IN SITU MONITORING DURING MOCVD OF ALGaN, Jung Han, J. J. Figiel, M. H. Crawford, and J. A. Floro, Electrochem. Soc. Proc. 98-18, 137 (1999).
  54. EXTENSIONS OF THE STONEY FORMULA FOR SUBSTRATE CURVATURE TO CONFIGURATIONS WITH THIN SUBSTRATES OR LARGE DEFORMATIONS, L. B. Freund, J. A. Floro, and E. Chason, Appl. Phys. Lett. 74, 1987 (1999).
  55. SELF-ORGANIZED GROWTH OF ALLOY SUPERLATTICES, P. Venezuela, J. Tersoff, J. A. Floro, E. Chason, D. M. Follstaedt, Feng Liu, and M. G. Lagally, Nature, 397, 678 (1999).
  56. GROWTH INSTABILITIES AND DECOMPOSITION DURING HETEROEPITAXY, J. A. Floro, R. W. Goldman, P. W. Voorhees, and J. Tersoff, eds., Thin Solid Films 357 (1999).
  57. SPONTANEOUS PATTERN FORMATION ON ION BOMBARDED Si (001), Jonah Erlebacher, Michael J. Aziz, Eric Chason, Michael B. Sinclair, and Jerrold A. Floro, Phys. Rev. Lett. 82, 2330, (1999).
  58. STRESS EVOLUTION DURING METALORGANIC CHEMICAL VAPOR DEPOSITION OF GaN, S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, J. Hunter, H. Amano, and I. S. T. Tsong, Appl. Phys. Lett. 74, 356 (1999).
  59. THE EVOLUTION OF COHERENT ISLAND FORMATION IN Si1-xGex/Si (001), J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, and R. Q. Hwang, Phys. Rev. B 59, 1990 (1999).
  60. STRESS AND DEFECT CONTROL IN GaN USING LOW TEMPERATURE INTERLAYERS, Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason, and Jeffrey Figiel, Jpn. J. Appl. Phys. 37, L1540, (1998).
  61. SiGe ISLAND SHAPE TRANSITIONS INDUCED BY ELASTIC REPULSION, J. A. Floro, G. A. Lucadamo, E. Chason, L. B. Freund, M. Sinclair, R. D. Twesten, and R. Q. Hwang, Phys. Rev. Lett. 80, 4717 (1998).
  62. DYNAMIC SELF-ORGANIZATION OF STRAINED ISLANDS DURING SiGe EPITAXIAL GROWTH, J. A. Floro, E. Chason, M. Sinclair, L. B. Freund, and G. A. Lucadamo, Appl. Phys. Lett. 73, 951 (1998).
  63. SPECTROSCOPIC LIGHT SCATTERING FOR REAL-TIME MEASUREMENTS OF THIN FILM AND SURFACE EVOLUTION, Eric Chason, Michael B. Sinclair, Jerry A. Floro, John A. Hunter, and Robert Q. Hwang, Appl. Phys. Lett. 72, 3276 (1998).
  64. A LASER-BASED THIN FILM GROWTH MONITOR, Charles Taylor, Darryl Barlett, Eric Chason, and Jerry Floro, The Industrial Physicist, March 1998, p25.
  65. SiGe COHERENT ISLANDING AND STRESS RELAXATION IN THE HIGH MOBILITY REGIME, J. A. Floro, E. Chason, R. D. Twesten, R. Q. Hwang, and L. B. Freund, Phys. Rev. Lett. 79, 3946 (1997).
  66. REAL-TIME STRESS EVOLUTION DURING Si1-xGex HETEROEPITAXY: DISLOCATIONS, ISLANDING, AND SEGREGATION, J. A. Floro, E. Chason, S. R. Lee, R. D. Twesten, and R. Q. Hwang, J. Elec. Mater. 26, 983 (1997).
  67. BIAXIAL MODULI OF COHERENT Si1-xGex FILMS ON Si (001), J. A. Floro, E. Chason, S. R. Lee, and G. A. Peterson, Appl. Phys. Lett. 71, 1694 (1997).
  68. INTERACTION OF CAVITIES WITH MISFIT DISLOCATIONS IN SiGe/Si HETEROSTRUCTURES, D. M. Follstaedt, S. M. Myers, J. A. Floro, and S. R. Lee, Nucl. Instrum. and Methods B127/128, 375 (1997).
  69. MEASURING Ge SEGREGATION BY REAL-TIME STRESS MONITORING DURING Si1-xGex MOLECULAR BEAM EPITAXY, J. A. Floro and E. Chason, Appl. Phys. Lett. 69, 3830 (1996).
  70. MEASUREMENT OF STRESS EVOLUTION DURING THIN FILM DEPOSITION, E. Chason and J. A. Floro, Mat. Res. Soc. Symp. Proc. 428, 499 (1996).
  71. RECIPROCAL SPACE ANALYSIS OF THE INITIAL STAGES OF STRAIN RELAXATION IN SiGe EPILAYERS, S. R. Lee and J. A. Floro, Mat. Res. Soc. Symp. Proc. 399, 455 (1996).
  72. REAL TIME MEASUREMENT OF EPILAYER STRAIN USING A SIMPLIFIED WAFER CURVATURE TECHNIQUE, J. A. Floro, E. Chason, and S. R. Lee, Mat. Res. Soc. Symp. Proc. 406, 491 (1996).
  73. SURFACE DEFECT PRODUCTION ON Ge(001) DURING LOW ENERGY ION BOMBARDMENT. J.A. Floro, B.K. Kellerman, E. H. Chason , S. T. Picraux, J. Appl. Phys. 77, 2351 (1995).
  74. OPTICAL MEASUREMENT OF BAND GAPS OF Si1-xCx/Si (0≤x≤0.014) SEMICONDUCTOR ALLOYS. H. Lee, J. A. Floro, S. R. Kurtz, C. H. Seager, S. R. Lee, E. D. Jones, J. F. Nelson, T. Mayer. Jpn. J. Appl. Phys. 34, L1340 (1995).
  75. SMOOTHING DURING ION-ASSISTED GROWTH BY TRANSIENT ION BEAM-INDUCED DEFECTS. B. K. Kellerman, E. H. Chason, J. A. Floro, S. T. Picraux, Mater. Res. Soc. Proc. 388, 349 (1995).
  76. DIELECTRIC FUNCTION AND BAND GAPS OF SIC AND SI GE C (0
  77. SMOOTHING DURING ION-ASSISTED GROWTH BY TRANSIENT ION BEAM-INDUCED DEFECTS. B. K. Kellerman, E. H. Chason, J. A. Floro, S. T. Picraux, Mater. Res. Soc. Proc. 388, 349 (1995).
  78. THE ROLE OF TRANSIENT ION-INDUCED DEFECTS IN ION BEAM-ASSISTED GROWTH, B. K. Kellerman, E. H. Chason, J. A. Floro, S. T. Picraux, Appl. Phys. Lett. 67, 1703 (1995).
  79. DEFECT PRODUCTION AND RECOMBINATION DURING LOW-ENERGY ION PROCESSING, B. K. Kellerman, J. A. Floro, E. H. Chason, D. K. Brice, S. T. Picraux and J. M. White, J. Vac. Sci. Tech. A 13, 972 (1995).
  80. MEAN FIELD ANALYSIS OF ORIENTATION SELECTIVE GRAIN GROWTH DRIVEN BY INTERFACE ENERGY ANISOTROPY, J. A. Floro and C. V. Thompson, Mat. Res. Soc. Proc., 343, 65 (1994).
  81. POLYCRYSTALLINE THIN FILMS: STRUCTURE, PROPERTIES, TEXTURE, AND APPLICATIONS, MRS Symposium Proceedings Vol. 343, Katayun Barmak, Michael Andrew Parker, Jerrold A. Floro, Robert Sinclair, and David A. Smith, eds. (Materials Research Society, Pittsburgh, PA, 1994).
  82. OXYGEN ROUGHENING OF Ge (001) SURFACES, K.M. Horn, E. Chason, J. Y. Tsao, J. A. Floro, and S. T. Picraux, Surf. Sci. 320, 174 (1994).
  83. INTRA-CASCADE RECOMBINATION OF POINT DEFECTS DURING ION BOMBARDMENT OF Ge (001), J. A. Floro, B. K. Kellerman, E. Chason, S. T. Picraux, D. K. Brice, and K. M. Horn, Proceedings of the 1993 Fall Symposium of the Materials Research Society.
  84. THE COMPETITION BETWEEN STRAIN AND INTERFACIAL ENERGYDURING EPITAXIAL GRAIN GROWTH IN Ag FILMS ON Ni (001), J. A. Floro, C. V. Thompson, R. Carel, and P. D. Bristowe, J. Mater. Res. 9, 2411 (1994).
  85. ENERGY MINIMIZATION DURING EGG: STRAINvs. INTERFACIAL ENERGY, J. A. Floro, R. Carel, and C. V. Thompson, Proceedings of the 1993 Fall Symposium of the Materials Research Society. (presented by JAF at 1993 MRS Spring Symposium)
  86. NUMERICAL ANALYSIS OF INTERFACE-ENERGY-DRIVEN COARSENING IN THIN FILMS AND ITS CONNECTION TO GRAIN GROWTH, J. A. Floro and C.V. Thompson, Acta. Metall. Mater. 41, 1137 (1993).
  87. EPITAXIAL GRAIN GROWTH AND ORIENTATION METASTABILITY IN HETEROEPITAXIAL THIN FILMS, J. Floro and C.V. Thompson, Proceedings of the 1990 Spring Symposium of the Materials Research Society.
  88. EPITAXIAL GRAIN GROWTH IN THIN METAL FILMS, C.V. Thompson, J. Floro, and Henry I.Smith, J. Appl. Phys. 67, 4099 (1990).
  89. Rh4Si5 FORMATION IN THE MULTILAYER GEOMETRY: EXPLOSIVE REACTION VS. NUCLEATION CONTROLLED KINETICS, J.A. Floro, J. Appl. Phys. 63, 246 (1988).
  90. PROPAGATION OF EXPLOSIVE CRYSTALLIZATION IN THIN Rh-Si MULTILAYER FILMS, J.A. Floro, J. Vac. Sci. Tech. A4(3), 631 (1986).
  91. STRESS MODIFICATION OF WSi2.2 FILMS BY CONCURRENT LOW ENERGY ION BOMBARDMENT DURING ALLOY EVAPORATION, D.S. Yee, J.A. Floro, D.J. Mikalsen, J.J. Cuomo, K.Y. Ahn, and D.A. Smith, J. Vac. Sci. Tech. A3(6), 2121 (1985).
  92. ION-BOMBARDMENT-IONDUCED WHISKER FORMATION ON GRAPHITE, J.A. Floro, S.M. Rossnagel, and R.S. Robinson, J. Vac. Sci. Tech. A1(3), 1398 (1983).
  93. CRYSTALLINE ASPECTS OF IMPURITY GENERATED SPUTTER CONES, J.A. Floro, S.M. Rossnagel, and R.S. Robinson, Rad. Eff. Lett. 68, 57 (1982).