AVS Announces Its Major Award Winners of 2008
New York, October 28, 2008—The AVS has selected its major award winners for 2008. The AVS established an annual awards program to encourage excellence in research and innovation in technical areas of interest to the AVS.
UVa's Wei Chen, Physics Graduate Student, Graduate Arts and Sciences, has won a Leo M Falicov division award for Best Presentation of Graduate Research for his presentation "Biased Target Ion Beam Deposition of AlOx Barrier Magnetic Tunnel Junctions" AVS Magnetic Interfaces and Nanostructures Division.
The Leo M. Falicov Student Award was established in memory of Professor Leo M. Falicov to recognize outstanding research performed by a graduate student in areas of interest to the MIND. Finalists are selected on the basis of the oral presentation, considering quality of research and clarity of presentation. The award consists of a $500 cash prize and certificate.
The AVS 55th International Symposium & Exhibition consisted of 111 oral and 2 poster sessions sponsored by the AVS Divisions and Technical Groups as well as 4 Topical Conferences, and 4 Focus Topics. Focus Topics are topics that cross the boundaries of several Divisions and Technical Groups. This year’s Focus Topics were: Biological, Organic, and Soft Materials; Energy; Nanomanufacturing; and Tribology. Topical Conferences included: BioMEMS; Graphene; In Situ Microscopy and Spectroscopy: Interfacial and Nanoscale Science; and Synchrotron-based Spectroscopy and Spectro-microscopy.
Abstract:
One of the most promising candidates for future high-density data storage applications is Magnetic Random Access Memory (MRAM) utilizing magnetic tunnel junctions (MTJs) as storage units. Here MTJs with AlOx barriers are deposited with a unique tool called Biased Target Ion Beam Deposition (BTIBD) system using novel low energy ion source (0~50eV) and biased targets sputtering. The ability to control the low ion beam energy as well as the target bias (50eV~1200eV), is suited for producing high quality atomic scale smooth interfaces for the multi-layers MTJs, which is the key for high tunneling magneto-resistance (TMR) performance desired for application. The target voltage effect on properties of MTJ is studied by measuring the Neel coupling effect, TMR as well as the Resistance-Area product (RA), which helps the understanding of adatom energy impact on the magnetic interfaces and optimization of properties of MTJs.
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